2SB976 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB976
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 195 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
2SB976 Transistor Equivalent Substitute - Cross-Reference Search
2SB976 Datasheet (PDF)
2sb976 e.pdf
Transistor2SB976Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 27
2sb976.pdf
Transistor2SB976Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 27
2sb970 e.pdf
Transistor2SB970Silicon PNP epitaxial planer typeFor low-voltage output amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings
2sb970.pdf
SMD Type TransistorsPNP Transistors2SB970SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 Low collector to emitter saturation voltage VCE(sat). For low-voltage output amplification1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage
2sb975.pdf
INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB975DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD1309Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power
2sb979.pdf
isc Silicon PNP Power Transistor 2SB979DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sb974.pdf
INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB974DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2AFE CLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2ACE(sat) CComplement to Type 2SD1308Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power
2sb975-220.pdf
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB975 DESCRIPTION With TO-220 package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Low frequency power amplification Low speed power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
