2SB989 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor 2SB989 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -1.7V(Max)@ (I = -3A, I = -0.3A) CE(sat) C B Complement to Type 2SD1352 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

Transistor 2SB987 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1211 5.9 0.2 4.9 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. 0.7 0.1 Makes up a complementary pair with 2SD1211, which is opti- mum for the pre-driver stage of a 40 to 60W output ampl

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SB985 TRANSISTOR (PNP) 1. EMITTER FEATURES Power Supplies, Relay Drivers, Lamp Drivers 2. COLLECTOR Adoption of FBET,MBIT Processes Low Saturation Voltage 3. BASE Large Current Capacity and Wide ASO Equivalent Circuit B985=Device code B985 Solid dot = Green moldin

JMnic Product Specification Silicon PNP Power Transistors 2SB988 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For vertical output and general purpose applicaitons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYM

2SB985 TO-92MOD Transistor (PNP) 1. EMITTER TO-92MOD 1 2 2. COLLECTOR 3 3. BASE Features 5.800 Power supplies, relay drivers, lamp drivers 6.200 Adoption of FBET,MBIT processes Low saturation voltage 8.400 8.800 Large current capacity and wide ASO 0.900 1.100 0.400 0.600 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Parameter Va

2SB985 PNP General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage -50 VCEO V VCBO Collector-Base Voltage V -60 VEBO Emitter-Base Voltage V -6.0 IC Collector Current - Continuous -3.0 mA Total Device Dissipation PD 0.9 mW TA=25 C Tj C Junction Temperatur

2SB985(3CA985) PNP /SILICON PNP TRANSISTOR , , Purpose Power supplies, relay drivers, lamp drivers, electrical equipment. , Features Low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25

isc Silicon PNP Power Transistor 2SB986 DESCRIPTION High Collector Current-I = -4.0A C Low Saturation Voltage - V = -0.5V(Max)@ I = -2A, I = -0.1A CE(sat) C B Good Linearity of h FE Complement to Type 2SD1348 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies, relay drivers, lamp drivers, electr

isc Silicon PNP Power Transistor 2SB980 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon PNP Power Transistor 2SB983 DESCRIPTION High Switching Time Low Collector Saturation Voltage V = -0.4V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1345 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverters, converters Controllers for DC motor, pulse motor Switching power s

isc Silicon PNP Power Transistor 2SB988 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp

isc Silicon PNP Power Transistor 2SB982 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon PNP Power Transistor 2SB981 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll