2SB989 Datasheet and Replacement

   Type Designator: 2SB989
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO220

2SB989 Substitution

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2SB989 Datasheet (PDF)

..1. Size:216K inchange semiconductor
2sb989.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB989DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.7V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

9.1. Size:111K sanyo
2sb986.pdf pdf_icon

9.2. Size:96K sanyo
2sb985.pdf pdf_icon

9.3. Size:183K nec
2sb984.pdf pdf_icon

9.4. Size:41K panasonic
2sb987 e.pdf pdf_icon

Transistor2SB987Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD12115.9 0.2 4.9 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.0.7 0.1Makes up a complementary pair with 2SD1211, which is opti-mum for the pre-driver stage of a 40 to 60W output ampl

9.5. Size:495K no
2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf pdf_icon

9.6. Size:506K jiangsu
2sb985.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate TransistorsTO-92MOD 2SB985 TRANSISTOR (PNP)1. EMITTERFEATURES Power Supplies, Relay Drivers, Lamp Drivers2. COLLECTOR Adoption of FBET,MBIT Processes Low Saturation Voltage3. BASE Large Current Capacity and Wide ASO Equivalent Circuit B985=Device code B985 Solid dot = Green moldin

9.7. Size:155K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB988 DESCRIPTION With TO-220C package Low collector saturation voltage APPLICATIONS For vertical output and general purpose applicaitons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYM

9.8. Size:250K lge
2sb985.pdf pdf_icon

2SB985 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 22. COLLECTOR 3 3. BASE Features5.800 Power supplies, relay drivers, lamp drivers 6.200 Adoption of FBET,MBIT processes Low saturation voltage 8.4008.800 Large current capacity and wide ASO 0.9001.1000.4000.600MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Parameter Va

9.9. Size:209K wietron
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2SB985PNP General Purpose TransistorsP b Lead(Pb)-Free1231.EMITTER3.BASE2.COLLECTORTO-92MODMAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage-50VCEOVVCBOCollector-Base Voltage V-60VEBOEmitter-Base Voltage V-6.0ICCollector Current - Continuous -3.0 mATotal Device DissipationPD 0.9mWTA=25CTj CJunction Temperatur

9.10. Size:194K lzg
2sb985 3ca985.pdf pdf_icon

2SB985(3CA985) PNP /SILICON PNP TRANSISTOR :,, Purpose: Power supplies, relay drivers, lamp drivers, electrical equipment. :, Features:Low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25

9.11. Size:214K inchange semiconductor
2sb986.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB986DESCRIPTIONHigh Collector Current-I = -4.0ACLow Saturation Voltage -: V = -0.5V(Max)@ I = -2A, I = -0.1ACE(sat) C BGood Linearity of hFEComplement to Type 2SD1348Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies, relay drivers, lamp drivers,electr

9.12. Size:220K inchange semiconductor
2sb980.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB980DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

9.13. Size:213K inchange semiconductor
2sb983.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB983DESCRIPTIONHigh Switching TimeLow Collector Saturation Voltage: V = -0.4V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverters, convertersControllers for DC motor, pulse motorSwitching power s

9.14. Size:215K inchange semiconductor
2sb988.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB988DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp

9.15. Size:219K inchange semiconductor
2sb982.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB982DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

9.16. Size:219K inchange semiconductor
2sb981.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB981DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Datasheet: 2SB985U , 2SB986 , 2SB986R , 2SB986S , 2SB986T , 2SB986U , 2SB987 , 2SB988 , TIP2955 , 2SB99 , 2SB991 , 2SB992 , 2SB993 , 2SB994 , 2SB995 , 2SB996 , 2SB997 .