2SB99 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB99

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.125 W

Tensión colector-base (Vcb): 30 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.6 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO5

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2SB99 datasheet

 0.1. Size:216K  inchange semiconductor
 2sb996.pdf pdf_icon

2SB99

isc Silicon PNP Power Transistor 2SB996 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Recommended for 20 25W high-fidelity audio frequency amplifier output stage. ABSOL

 0.2. Size:216K  inchange semiconductor
 2sb992.pdf pdf_icon

2SB99

isc Silicon PNP Power Transistor 2SB992 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.5V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

 0.3. Size:216K  inchange semiconductor
 2sb993.pdf pdf_icon

2SB99

isc Silicon PNP Power Transistor 2SB993 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -4A CE(sat) C Complement to Type 2SD1363 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High curre

 0.4. Size:186K  inchange semiconductor
 2sb991.pdf pdf_icon

2SB99

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB991 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -180V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -0.5A CE(sat) C Wide area of safe operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequen

MOSTRAR MÁS

Otros transistores... 2SB986, 2SB986R, 2SB986S, 2SB986T, 2SB986U, 2SB987, 2SB988, 2SB989, TIP2955, 2SB991, 2SB992, 2SB993, 2SB994, 2SB995, 2SB996, 2SB997, 2SB998