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2SB99 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB99
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.125 W
   Tensión colector-base (Vcb): 30 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.6 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO5
 

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2SB99 Datasheet (PDF)

 0.1. Size:216K  inchange semiconductor
2sb996.pdf pdf_icon

2SB99

isc Silicon PNP Power Transistor 2SB996DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifier output stage.ABSOL

 0.2. Size:216K  inchange semiconductor
2sb992.pdf pdf_icon

2SB99

isc Silicon PNP Power Transistor 2SB992DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.5V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1362Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

 0.3. Size:216K  inchange semiconductor
2sb993.pdf pdf_icon

2SB99

isc Silicon PNP Power Transistor 2SB993DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1363Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

 0.4. Size:186K  inchange semiconductor
2sb991.pdf pdf_icon

2SB99

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB991DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequen

Otros transistores... 2SB986 , 2SB986R , 2SB986S , 2SB986T , 2SB986U , 2SB987 , 2SB988 , 2SB989 , 2SD669 , 2SB991 , 2SB992 , 2SB993 , 2SB994 , 2SB995 , 2SB996 , 2SB997 , 2SB998 .

History: 2N2926 | 2SB975 | BF167

 

 
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