2SB998 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB998
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 6000
Paquete / Cubierta: TO126

Búsqueda de reemplazo de transistor bipolar 2SB998

2SB998 Datasheet (PDF)

9.1. Size:216K inchange semiconductor
2sb996.pdf

isc Silicon PNP Power Transistor 2SB996DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifier output stage.ABSOL

9.2. Size:216K inchange semiconductor
2sb992.pdf

isc Silicon PNP Power Transistor 2SB992DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.5V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1362Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

9.3. Size:216K inchange semiconductor
2sb993.pdf

isc Silicon PNP Power Transistor 2SB993DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOCollector Power Dissipation-: P = 40W@ T = 25C CLow Collector Saturation Voltage-: V = -0.4V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1363Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh curre

9.4. Size:186K inchange semiconductor
2sb991.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB991DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CWide area of safe operationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequen

9.5. Size:216K inchange semiconductor
2sb994.pdf

isc Silicon PNP Power Transistor 2SB994DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -3ACE(sat) CComplement to Type 2SD1354Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

9.6. Size:218K inchange semiconductor
2sb995.pdf

isc Silicon PNP Power Transistor 2SB995DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -2.0V(Max)@ I = -4ACE(sat) CComplement to Type 2SD1355Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 30W high-fidelity a

Otros transistores... 2SB99 , 2SB991 , 2SB992 , 2SB993 , 2SB994 , 2SB995 , 2SB996 , 2SB997 , 2222A , 2SB999 , 2SC100 , 2SC1000 , 2SC1000GTM , 2SC1001 , 2SC1002 , 2SC1003 , 2SC1003A .

History: MD985

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050