2SC1041 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1041
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 4 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1000 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO128
Búsqueda de reemplazo de 2SC1041
2SC1041 datasheet
2sc1047 e.pdf
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20
2sc1047.pdf
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20
2sc1046.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1046 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
Otros transistores... 2SC1035 , 2SC1036 , 2SC1037 , 2SC1038 , 2SC1039 , 2SC103A , 2SC104 , 2SC1040 , TIP35C , 2SC1042 , 2SC1043 , 2SC1044 , 2SC1045 , 2SC1045B , 2SC1045C , 2SC1045D , 2SC1046 .
History: 3N35 | 3N35A | 2SC5279
History: 3N35 | 3N35A | 2SC5279
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sb649a | 2sd188 | k b778 transistor | 2n5133 datasheet | 2sa726 transistor | 7506 mosfet | irlr8726 datasheet | ru7088r mosfet



