2SC1051L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1051 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1051DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency power amplifier and large powerswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Silicon Epitaxial Planar Transistor2SC1050GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 300 VCollector-emitter voltage (open base)VCEO - 250 VCollector current

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1050 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1050DESCRIPTIONWith TO-3 PackageHigh breakdown voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSilicon NPN high frequency,high power transistors in aplastic envelope,primarily for use in audio and generalpurposeABSOLUTE MAXIMUM RATI