2SC1079 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1079 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 110 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO3
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2SC1079 datasheet
..1. Size:174K jmnic
2sc1079.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL
..2. Size:122K inchange semiconductor
2sc1079 2sc1080.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=
..3. Size:182K inchange semiconductor
2sc1079.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1079 DESCRIPTION With TO-3 Package High power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO
9.5. Size:60K panasonic
2sc1047 e.pdf
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20
9.6. Size:56K panasonic
2sc1047.pdf
Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20
9.11. Size:78K secos
2sc1008.pdf
2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Base Collector J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G B A
9.12. Size:188K wingshing
2sc1050.pdf
Silicon Epitaxial Planar Transistor 2SC1050 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 300 V Collector-emitter voltage (open base) VCEO - 250 V Collector current
9.13. Size:352K hua-yuan
2sc1008.pdf
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR NPN TO 92 FEATURES 1.EMITTER Power dissipation PCM 0.8 W Tamb=25 2. BASE Collector current 3. COLLECTOR ICM 0.7 A Collector-base voltage 1 2 3 V(BR)CBO
9.14. Size:111K jiangsu
2sc1008.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1008 TRANSISTOR (NPN) 1. EMITTER 2. BASE FEATURES 3. COLLECTOR General Purpose Switching and Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-
9.15. Size:159K jmnic
2sc1050.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1050 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL
9.16. Size:44K jmnic
2sc1030.pdf
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC
9.17. Size:154K jmnic
2sc1080.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION With TO-3 package Complement to type 2SA679/680 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMET
9.18. Size:206K jmnic
2sc1061.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rat
9.19. Size:108K jmnic
2sc1096.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Em
9.20. Size:170K jmnic
2sc1051.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1051 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL
9.21. Size:160K jmnic
2sc1027.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltage APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute
9.22. Size:173K jmnic
2sc1098.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5 17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-20
9.23. Size:346K wietron
2sc1008.pdf
WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 80 A Collector Current ICM 0.7 Power Dissipation PCM 0.8 W -55 to +150 Junction Temperature TJ C -55 to +150 Tstg Storage Temperature C ELECTRICAL CHARACTE
9.24. Size:1663K kexin
2sc1009.pdf
SMD Type Transistors NPN Transistors 2SC1009 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collecto
9.25. Size:176K inchange semiconductor
2sc1046.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1046 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
9.26. Size:221K inchange semiconductor
2sc1008.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1008 DESCRIPTION NPN high-voltage transistor Low current (max. 700 mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
9.27. Size:176K inchange semiconductor
2sc1050.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1050 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Silicon NPN high frequency,high power transistors in a plastic envelope,primarily for use in audio and general purpose ABSOLUTE MAXIMUM RATI
9.28. Size:182K inchange semiconductor
2sc1080.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1080 DESCRIPTION With TO-3 Package High power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 110 V CBO
9.29. Size:216K inchange semiconductor
2sc1061.pdf
isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION Low Collector Saturation Voltage- V = 1.0(V)(Max)@ I = 2A CE(sat) C DC Current Gain- h = 35-320 @ I = 0.5A FE C Complement to Type 2SA671 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RA
9.30. Size:177K inchange semiconductor
2sc1004.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1004 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS for use in horizontal deflection output stages for color TV receives ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
9.31. Size:230K inchange semiconductor
2sc1060.pdf
isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION With TO-220 package Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers A
9.32. Size:118K inchange semiconductor
2sc1098 2sc1098a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5 17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outl
9.33. Size:117K inchange semiconductor
2sc1096.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1096 DESCRIPTION With TO-202 package Low breakdown voltage High current High fT APPLICATIONS For audio frequency power amplifier and low speed switching applications Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN DESCRIPTION 1 Base
9.34. Size:181K inchange semiconductor
2sc1034.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1034 DESCRIPTION DC Current Gain -h = 4(Min)@ I = 0.75A FE C Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM
9.35. Size:182K inchange semiconductor
2sc1051.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1051 DESCRIPTION With TO-3 Package High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low frequency power amplifier and large power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.36. Size:181K inchange semiconductor
2sc1024.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1024 DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 50V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM R
9.37. Size:208K inchange semiconductor
2sc1027.pdf
isc Silicon NPN Power Transistor 2SC1027 DESCRIPTION With TO-3 package High power dissipation Low collector saturation voltag Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-
Otros transistores... 2SC1074Z, 2SC1075, 2SC1075Z, 2SC1076, 2SC1076Z, 2SC1077, 2SC1077A, 2SC1078, BD139, 2SC108, 2SC1080, 2SC1081, 2SC1082, 2SC1083, 2SC1083F, 2SC1084, 2SC1085
