2SC1278S Todos los transistores

 

2SC1278S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1278S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 75 MHz

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SC1278S

 

2SC1278S Datasheet (PDF)

5.1. r07ds0432ej 2sc1213ak-1.pdf Size:102K _renesas

2SC1278S
2SC1278S

 Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous: REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application • Low frequency amplifier • Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collec

5.2. r07ds0431ej 2sc1213a-1.pdf Size:170K _renesas

2SC1278S
2SC1278S

 Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item S

 5.3. 2sc1215 e.pdf Size:58K _panasonic

2SC1278S
2SC1278S

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0± 0.2 4.0± 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base

5.4. 2sc1215.pdf Size:62K _panasonic

2SC1278S
2SC1278S

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0± 0.2 4.0± 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base

 5.5. 2sc1226.pdf Size:75K _panasonic

2SC1278S



5.6. 2sc1214.pdf Size:22K _hitachi

2SC1278S
2SC1278S

2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collec

5.7. 2sc1212.pdf Size:29K _hitachi

2SC1278S
2SC1278S

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power diss

5.8. 2sc1213.pdf Size:23K _hitachi

2SC1278S
2SC1278S

2SC1213, 2SC1213A Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage

5.9. 2sc1213-2sc1213a.pdf Size:277K _secos

2SC1278S
2SC1278S

2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D

5.10. 2sc1251.pdf Size:40K _advanced-semi

2SC1278S
2SC1278S

2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65

5.11. 2sc1252.pdf Size:28K _advanced-semi

2SC1278S

2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency PACKAGE STYLE TO-39 Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. FEATURES INCLUDE: • High Gain -17 dB Typ. @ 200 MHz • Low NF - 3.0 dB Typ. @ 200 MHz • Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 45 V VCE 25 V PDISS 5 W @ TC = 25 °C

5.12. 2sc1212.pdf Size:179K _jmnic

2SC1278S
2SC1278S

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC121

5.13. 2sc1222.pdf Size:106K _usha

2SC1278S
2SC1278S

Transistors 2SC1222

5.14. 2sc1212a.pdf Size:214K _inchange_semiconductor

2SC1278S
2SC1278S

isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION ·High Collector Current -I = 1A C ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

5.15. 2sc1227.pdf Size:176K _inchange_semiconductor

2SC1278S
2SC1278S

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1227 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For clocked voltage converters ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

5.16. 2sc1212 2sc1212a.pdf Size:146K _inchange_semiconductor

2SC1278S
2SC1278S

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS V

5.17. 2sc1295.pdf Size:177K _inchange_semiconductor

2SC1278S
2SC1278S

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1295 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Col

5.18. 2sc1226 2sc1226a.pdf Size:180K _inchange_semiconductor

2SC1278S
2SC1278S

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMET

5.19. 2sc1212.pdf Size:215K _inchange_semiconductor

2SC1278S
2SC1278S

isc Silicon NPN Power Transistor 2SC1212 DESCRIPTION ·High Collector Current I = 1A C ·Collector-Emitter Breakdown Voltage- : V = 50V(Min) (BR)CEO ·Good Linearity of h FE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMET

5.20. 2sc1235.pdf Size:180K _inchange_semiconductor

2SC1278S
2SC1278S

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1235 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

Otros transistores... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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