2SC1309 Datasheet. Equivalente

 ..1. Size:178K  inchange semiconductor
 2sc1309.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1309 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 8.1. Size:376K  no
 2sc1307.pdf

 8.2. Size:178K  inchange semiconductor
 2sc1308.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1308 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

 9.1. Size:55K  panasonic
 2sc1359 e.pdf

Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t

 9.2. Size:49K  panasonic
 2sc1318a e.pdf

Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA720A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collec

 9.3. Size:47K  panasonic
 2sc1383 2sc1384.pdf

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SA683 and 2SA684 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit

 9.4. Size:51K  panasonic
 2sc1317 e.pdf

Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SA719 and 2SA720 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA719 and 2SA720. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SC1317 30

 9.5. Size:37K  panasonic
 2sc1360.pdf

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

 9.6. Size:52K  panasonic
 2sc1359.pdf

Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t

 9.7. Size:41K  panasonic
 2sc1360 e.pdf

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

 9.8. Size:67K  panasonic
 2sc1317 2sc1318.pdf

Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit mm For low-frequency power amplification and driver amplification 5.0 0.2 4.0 0.2 Complementary to 2SA719 and 2SA720 Features 0.7 0.1 Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15

 9.9. Size:51K  panasonic
 2sc1383 e.pdf

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SA683 and 2SA684 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit

 9.10. Size:276K  utc
 2sc1384.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC1384 is power amplifier and driver. FEATURES * Low VCE(SAT) * 2 3W output in complementary pair with 2SA684 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 - 2SC1384G-x-AB3-R SOT-89 B C E Tape Reel 2SC138

 9.11. Size:52K  hitachi
 2sc1342.pdf

2SC1342 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer Local oscollator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1342 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 30 mA Collector power diss

 9.12. Size:40K  hitachi
 2sc1344 2sc1345.pdf

2SC1344, 2SC1345 Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1344, 2SC1345 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC1344 2SC1345 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Co

 9.13. Size:43K  hitachi
 2sc1345.pdf

2SC1345(K) Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1345 (K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 2

 9.14. Size:112K  mospec
 2sc1358.pdf

A A A

 9.15. Size:112K  mospec
 2sc1325.pdf

A A A

 9.16. Size:43K  no
 2sc1327.pdf

 9.17. Size:78K  no
 2sc1335.pdf

 9.18. Size:160K  no
 2sc1377.pdf

 9.19. Size:74K  no
 2sc1398.pdf

 9.20. Size:47K  no
 2sc1346.pdf

 9.21. Size:669K  secos
 2sc1383l-1384l.pdf

2SC1383L / 2SC1384L NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92L FEATURE G H Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 1Emitter 1 1 1 J 2Collector 2 2 2 3Base 3 3 3 A D CLASSIFICATION OF hFE(1) Mil

 9.22. Size:130K  secos
 2sc1318a.pdf

2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Collector output capacitance Cob=11 pF (TYP), 20 pF (MAX) G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S Millimeter REF

 9.23. Size:450K  secos
 2sc1318.pdf

2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter Complementary Pair with 2SA720 REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 CLASSIFICAT

 9.24. Size:377K  jiangsu
 2sc1383 2sc1384.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 TRANSISTOR (NPN) 2SC1384 TO-92L FEATURES Low Collector to Emitter Saturation Voltage VCE(sat). 1.EMITTER Complementary Pair with 2SA0683 and 2SA0684. 2.COLLECTOR 3.BASE C1383=Device code C1383 Solid dot = Green molding compound device, Equivalent Circuit if none,

 9.25. Size:638K  jiangsu
 2sc1318.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1318 TRANSISTOR (NPN) 1. EMITTER FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) 2. COLLECTOR Complementary Pair with 2SA720 3. BASE Equivalent Circuit C1318=Device code C1318 Solid dot=Green molding compound device, XXX if none,the normal device

 9.26. Size:103K  usha
 2sc1393.pdf

Transistors 2SC1393

 9.27. Size:73K  usha
 2sc1394.pdf

Transistors 2SC1394

 9.28. Size:245K  lge
 2sc1383-2sc1384 to-92mod.pdf

2SC1383/2SC1384 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3.BASE 3 Features 5.800 Low collector to emitter saturation voltage VCE(sat). 6.200 Complementary pair with 2SA0683 and 2SA0684. 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter 2SC1383 2SC1384 Units 0.400 0.600 VCBO Collector-Base Voltage 30

 9.29. Size:245K  lge
 2sc1383-2sc1384.pdf

2SC1383/2SC1384 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low collector to emitter saturation voltage VCE(sat). 7.800 8.200 Complementary pair with 2SA0683 and 2SA0684. 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units 0.350 VCBO Collector-Base Voltage 30 60 V 0.550

 9.30. Size:226K  lge
 2sc1318a.pdf

2SC1318(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA Di

 9.31. Size:888K  wietron
 2sc1383 84.pdf

2SC1383/2SC1384 2 3 1 2 3 1. EMITTER 1 2. COLLECTOR 3. BASE TO-92MOD Value 25 2SC1383 V CEO 50 2SC1384 2SC1383 30 2SC1384 60 5.0 1.0 Peak Collector Current Adc Icp(DC) 1.5 1.0 1 8.0 125 2SC1383=2SC1383, 2SC1384=2SC1384 25 2SC1383 2.0 50 2SC1384 2SC1383 30 10 2SC1384 60 10 u 0.1 20 1 WEITRON http //www.weitron.com.tw 2SC1383/2SC1384 ELECTRICAL CHAR

 9.32. Size:908K  blue-rocket-elect
 2sc1383.pdf

 9.33. Size:514K  semtech
 st2sc1383 st2sc1384.pdf

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Co

 9.34. Size:371K  globaltech semi
 gst2sc1383.pdf

GST2SC1383 Series NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V (2SC1383) amplifier and switch. 50V (2SC1384) Collector Current 1.0A Lead(Pb)-Free Packages & Pin Assignments TO-92MOD Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Ma

 9.35. Size:198K  lzg
 2sc1360-a 3da1360-a.pdf

2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR Purpose Picture IF amplifier . , Features High f , large P . T C /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SC1360 50 V CBO V 2SC1360A 60 2SC1360

 9.36. Size:227K  lzg
 2sc1383 3da1383.pdf

2SC1383(3DA1383) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency power amplifier and driver. , 2SA683(3CA683) /Features Low V ,complementary pair CE(sat) with 2SA683(3CA683). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30

 9.37. Size:193K  lzg
 2sc1384 3da1384.pdf

 9.38. Size:166K  tgs
 2sc1383 2sc1384.pdf

TIGER ELECTRONIC CO.,LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 TRANSISTOR (NPN) TO-92L 2SC1384 FEATURES 1.EMITTER Low collector to emitter saturation voltage VCE(sat). 2.COLLECTOR Complementary pair with 2SA0683 and 2SA0684. 3.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units VCBO Collector-Base Voltage 30 60 V

 9.39. Size:65K  inchange semiconductor
 2sc1398 2sc1398a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1398 2SC1398A DESCRIPTION With TO-220 package 2SC1398 is complement to type 2SA748 Large collector power dissipation APPLICATIONS For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbo

 9.40. Size:177K  inchange semiconductor
 2sc1343.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1343 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto

 9.41. Size:180K  inchange semiconductor
 2sc1391.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1391 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.42. Size:178K  inchange semiconductor
 2sc1358.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1358 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto

 9.43. Size:177K  inchange semiconductor
 2sc1367.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1367 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.44. Size:184K  inchange semiconductor
 2sc1368.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1368 DESCRIPTION High Collector Current I = 1.5A C Collector-Emitter Breakdown Voltage- V = 25V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB

 9.45. Size:180K  inchange semiconductor
 2sc1316.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1316 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.46. Size:184K  inchange semiconductor
 2sc1383.pdf

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1383 DESCRIPTION Low Collector Saturation Voltage Complement to Type 2SA683 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification and driver amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.47. Size:178K  inchange semiconductor
 2sc1325.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1325 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto

 9.48. Size:178K  inchange semiconductor
 2sc1348.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1348 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co

 9.49. Size:193K  inchange semiconductor
 2sc1398.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1398 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U