2SC1312
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1312
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 35
V
Tensión colector-emisor (Vce): 35
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SC1312
2SC1312
Datasheet (PDF)
8.1. Size:49K panasonic
2sc1318a e.pdf
Transistor2SC1318ASilicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA720A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collec
8.2. Size:51K panasonic
2sc1317 e.pdf
Transistor2SC1317, 2SC1318Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SA719 and 2SA7205.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Complementary pair with 2SA719 and 2SA720.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SC1317 30
8.3. Size:67K panasonic
2sc1317 2sc1318.pdf
Transistors2SC1317, 2SC1318Silicon NPN epitaxial planer typeUnit: mmFor low-frequency power amplification and driver amplification 5.00.2 4.00.2Complementary to 2SA719 and 2SA720 Features0.70.1 Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit 0.45+0.15
8.4. Size:130K secos
2sc1318a.pdf
2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Collector output capacitance Cob=11 pF (TYP), 20 pF (MAX) G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S MillimeterREF
8.5. Size:450K secos
2sc1318.pdf
2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter Complementary Pair with 2SA720 REF.Min. Max.A 4.40 4.70B 4.30 4.70C 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51CLASSIFICAT
8.6. Size:638K jiangsu
2sc1318.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 2SC1318 TRANSISTOR (NPN)1. EMITTERFEATURES Low Collector to Emitter Saturation Voltage VCE(sat)2. COLLECTOR Complementary Pair with 2SA7203. BASE Equivalent Circuit C1318=Device code C1318 Solid dot=Green molding compound device, XXX if none,the normal device
8.7. Size:226K lge
2sc1318a.pdf
2SC1318(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 70 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA Di
8.8. Size:180K inchange semiconductor
2sc1316.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1316DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Otros transistores... 2SC1307
, 2SC1308
, 2SC1308K
, 2SC1308PK
, 2SC1309
, 2SC131
, 2SC1310
, 2SC1311
, 13003
, 2SC1312Y
, 2SC1313
, 2SC1313Y
, 2SC1314
, 2SC1314A
, 2SC1315
, 2SC1316
, 2SC1317
.
History: DTDG14GP