2SC1337 Todos los transistores

 

2SC1337 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1337

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 17 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 500 MHz

Capacitancia de salida (Cc): 36 pF

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: TO128

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2SC1337 Datasheet (PDF)

4.1. 2sc1335.pdf Size:78K _no

2SC1337
2SC1337



5.1. 2sc1383 e.pdf Size:51K _panasonic

2SC1337
2SC1337

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA683 and 2SA684 5.9± 0.2 4.9± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15 Parameter Symbol Ratings Unit

5.2. 2sc1360.pdf Size:37K _panasonic

2SC1337
2SC1337

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9± 0.2 4.9± 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

 5.3. 2sc1317 e.pdf Size:51K _panasonic

2SC1337
2SC1337

Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA719 and 2SA720 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA719 and 2SA720. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to 2SC1317 30

5.4. 2sc1318a e.pdf Size:49K _panasonic

2SC1337
2SC1337

Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SA720A 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25˚C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 –0.1 0.45 –0.1 Collec

 5.5. 2sc1317 2sc1318.pdf Size:67K _panasonic

2SC1337
2SC1337

Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification 5.0±0.2 4.0±0.2 Complementary to 2SA719 and 2SA720 Features 0.7±0.1 • Low collector to emitter saturation voltage VCE(sat) • Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit 0.45+0.15

5.6. 2sc1383 2sc1384.pdf Size:47K _panasonic

2SC1337
2SC1337

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA683 and 2SA684 5.9± 0.2 4.9± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15 Parameter Symbol Ratings Unit

5.7. 2sc1359.pdf Size:52K _panasonic

2SC1337
2SC1337

Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA838 5.0± 0.2 4.0± 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t

5.8. 2sc1360 e.pdf Size:41K _panasonic

2SC1337
2SC1337

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9± 0.2 4.9± 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

5.9. 2sc1359 e.pdf Size:55K _panasonic

2SC1337
2SC1337

Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA838 5.0± 0.2 4.0± 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t

5.10. 2sc1384.pdf Size:245K _utc

2SC1337
2SC1337

UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC1384 is power amplifier and driver. FEATURES * Low VCE(SAT) * 2~3W output in complementary pair with 2SA684 Lead-free: 2SC1384L Halogen-free: 2SC1384G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen-Free

5.11. 2sc1344 2sc1345.pdf Size:40K _hitachi

2SC1337
2SC1337

2SC1344, 2SC1345 Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1344, 2SC1345 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1344 2SC1345 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Co

5.12. 2sc1345.pdf Size:43K _hitachi

2SC1337
2SC1337

2SC1345(K) Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1345 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 2

5.13. 2sc1342.pdf Size:52K _hitachi

2SC1337
2SC1337

2SC1342 Silicon NPN Epitaxial Planar Application • VHF amplifier, mixer • Local oscollator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1342 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 30 mA Collector power diss

5.14. 2sc1324.pdf Size:154K _mitsubishi

2SC1337
2SC1337

5.15. 2sc1358.pdf Size:112K _mospec

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2SC1337

A A A

5.16. 2sc1325.pdf Size:112K _mospec

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2SC1337

A A A

5.17. 2sc1377.pdf Size:160K _no

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2SC1337



5.18. 2sc1307.pdf Size:376K _no

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2SC1337



5.19. 2sc1346.pdf Size:47K _no

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5.20. 2sc1327.pdf Size:43K _no

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5.21. 2sc1398.pdf Size:74K _no

2SC1337



5.22. 2sc1318.pdf Size:450K _secos

2SC1337
2SC1337

2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter  Complementary Pair with 2SA720 REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 CLASSIFICAT

5.23. 2sc1318a.pdf Size:130K _secos

2SC1337
2SC1337

2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Collector output capacitance: Cob=11 pF (TYP), 20 pF (MAX) G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S Millimeter REF

5.24. 2sc1383l-1384l.pdf Size:669K _secos

2SC1337
2SC1337

2SC1383L / 2SC1384L NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92L FEATURE G H Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 1Emitter 1 1 1 J 2Collector 2 2 2 3Base 3 3 3 A D CLASSIFICATION OF hFE(1) Mil

5.25. 2sc1393.pdf Size:103K _usha

2SC1337
2SC1337

Transistors 2SC1393

5.26. 2sc1394.pdf Size:73K _usha

2SC1337
2SC1337

Transistors 2SC1394

5.27. 2sc1368.pdf Size:184K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1368 DESCRIPTION ·High Collector Current I = 1.5A C ·Collector-Emitter Breakdown Voltage- : V = 25V(Min) (BR)CEO ·Good Linearity of h FE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. AB

5.28. 2sc1316.pdf Size:180K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1316 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

5.29. 2sc1358.pdf Size:178K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1358 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collecto

5.30. 2sc1348.pdf Size:178K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1348 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Co

5.31. 2sc1383.pdf Size:184K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1383 DESCRIPTION ·Low Collector Saturation Voltage ·Complement to Type 2SA683 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplification and driver amplification. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

5.32. 2sc1398 2sc1398a.pdf Size:65K _inchange_semiconductor

2SC1337
2SC1337

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1398 2SC1398A DESCRIPTION ·With TO-220 package ·2SC1398 is complement to type 2SA748 ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbo

5.33. 2sc1367.pdf Size:177K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1367 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.34. 2sc1309.pdf Size:178K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1309 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Col

5.35. 2sc1308.pdf Size:178K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1308 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Col

5.36. 2sc1343.pdf Size:177K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1343 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collecto

5.37. 2sc1398.pdf Size:193K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1398 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.38. 2sc1325.pdf Size:178K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1325 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collecto

5.39. 2sc1391.pdf Size:180K _inchange_semiconductor

2SC1337
2SC1337

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1391 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in lined-operated color TV chroma output circuits and sound output circuits ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

5.40. 2sc1318a.pdf Size:226K _lge

2SC1337
2SC1337

 2SC1318(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA Di

5.41. 2sc1383-2sc1384.pdf Size:245K _lge

2SC1337
2SC1337

 2SC1383/2SC1384 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low collector to emitter saturation voltage VCE(sat). 7.800 8.200 Complementary pair with 2SA0683 and 2SA0684. 0.600 0.800 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units 0.350 VCBO Collector-Base Voltage 30 60 V 0.550

5.42. 2sc1383-2sc1384 to-92mod.pdf Size:245K _lge

2SC1337
2SC1337

 2SC1383/2SC1384 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3.BASE 3 Features 5.800 Low collector to emitter saturation voltage VCE(sat). 6.200 Complementary pair with 2SA0683 and 2SA0684. 8.400 8.800 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 0.900 1.100 Symbol Parameter 2SC1383 2SC1384 Units 0.400 0.600 VCBO Collector-Base Voltage 30

5.43. 2sc1383 84.pdf Size:888K _wietron

2SC1337
2SC1337

2SC1383/2SC1384 2 3 1 2 3 1. EMITTER 1 2. COLLECTOR 3. BASE TO-92MOD Value 25 2SC1383 V CEO 50 2SC1384 2SC1383 30 2SC1384 60 5.0 1.0 Peak Collector Current Adc Icp(DC) 1.5 1.0 1 8.0 125 2SC1383=2SC1383, 2SC1384=2SC1384 25 2SC1383 2.0 50 2SC1384 2SC1383 30 10 2SC1384 60 10 u 0.1 20 1 WEITRON http://www.weitron.com.tw 2SC1383/2SC1384 ELECTRICAL CHAR

5.44. st2sc1383 st2sc1384.pdf Size:514K _semtech

2SC1337
2SC1337

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Co

5.45. gst2sc1383.pdf Size:371K _globaltech_semi

2SC1337
2SC1337

GST2SC1383 Series NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V (2SC1383) amplifier and switch. 50V (2SC1384) Collector Current : 1.0A Lead(Pb)-Free Packages & Pin Assignments TO-92MOD Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Ma

5.46. 2sc1383 3da1383.pdf Size:227K _lzg

2SC1337
2SC1337

2SC1383(3DA1383) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和激励。/Purpose: Audio frequency power amplifier and driver. 特点:饱和电压低,可与 2SA683(3CA683)互补。/Features: Low V ,complementary pair CE(sat) with 2SA683(3CA683). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30

5.47. 2sc1360-a 3da1360-a.pdf Size:198K _lzg

2SC1337
2SC1337

2SC1360(3DA1360) 2SC1360A(3DA1360A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于图像中频放大。 Purpose: Picture IF amplifier . 特点:特征频率高,集电极耗散功率大。 Features: High f , large P . T C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit 2SC1360 50 V CBO V 2SC1360A 60 2SC1360

5.48. 2sc1384 3da1384.pdf Size:193K _lzg

2SC1337
2SC1337

2SC1384(3DA1384) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和驱动。 Purpose: AF power amplifier and driver applications. 特点:饱和压降低,与 2SA684(3CA684)互补可得 2~3 瓦输出。 Features: Low V ,2~3W output in complementary pair with 2SA684(3CA684). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数

5.49. 2sc1383 2sc1384.pdf Size:166K _tgs

2SC1337
2SC1337

TIGER ELECTRONIC CO.,LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 TRANSISTOR (NPN) TO-92L 2SC1384 FEATURES 1.EMITTER Low collector to emitter saturation voltage VCE(sat). 2.COLLECTOR Complementary pair with 2SA0683 and 2SA0684. 3.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units VCBO Collector-Base Voltage 30 60 V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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