2SC1353 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1353
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.65 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO39
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2SC1353 Datasheet (PDF)
2sc1359 e.pdf

Transistor2SC1359Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA8385.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector t
2sc1359.pdf

Transistor2SC1359Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA8385.0 0.2 4.0 0.2FeaturesOptimum for RF amplification of FM/AM radios.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector t
2sc1358.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1358DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor large screen color deflection circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: CZTA77 | 2SC354 | 2N3763S
History: CZTA77 | 2SC354 | 2N3763S



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