2SC1353 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1353 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.65 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO39
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2SC1353 datasheet
2sc1359 e.pdf
Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t
2sc1359.pdf
Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA838 5.0 0.2 4.0 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector t
2sc1358.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1358 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For large screen color deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto
Otros transistores... 2SC1348-3, 2SC1349, 2SC1349F, 2SC135, 2SC1350, 2SC1351, 2SC1352, 2SC1352F, TIP32C, 2SC1354, 2SC1355, 2SC1355F, 2SC1356, 2SC1356F, 2SC1358, 2SC1358A, 2SC1359
Parámetros del transistor bipolar y su interrelación.
History: BC340 | 2N5831 | 2SA1198S | KRC118S | 2N3565 | DMC904F0 | AUY18-3
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