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2SC1367A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1367A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 700 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 120 pF

Ganancia de corriente contínua (hfe): 25

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SC1367A

 

2SC1367A Datasheet (PDF)

3.1. 2sc1367.pdf Size:177K _inchange_semiconductor

2SC1367A
2SC1367A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1367 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

4.1. 2sc1360.pdf Size:37K _panasonic

2SC1367A
2SC1367A

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9± 0.2 4.9± 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

4.2. 2sc1360 e.pdf Size:41K _panasonic

2SC1367A
2SC1367A

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9± 0.2 4.9± 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

 4.3. 2sc1368.pdf Size:184K _inchange_semiconductor

2SC1367A
2SC1367A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1368 DESCRIPTION ·High Collector Current I = 1.5A C ·Collector-Emitter Breakdown Voltage- : V = 25V(Min) (BR)CEO ·Good Linearity of h FE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. AB

4.4. 2sc1360-a 3da1360-a.pdf Size:198K _lzg

2SC1367A
2SC1367A

2SC1360(3DA1360) 2SC1360A(3DA1360A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于图像中频放大。 Purpose: Picture IF amplifier . 特点:特征频率高,集电极耗散功率大。 Features: High f , large P . T C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit 2SC1360 50 V CBO V 2SC1360A 60 2SC1360

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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