2SC1367A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1367 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2S

2SC1360(3DA1360) 2SC1360A(3DA1360A) NPN /SILICON NPN TRANSISTOR Purpose Picture IF amplifier . , Features High f , large P . T C /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SC1360 50 V CBO V 2SC1360A 60 2SC1360

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1368 DESCRIPTION High Collector Current I = 1.5A C Collector-Emitter Breakdown Voltage- V = 25V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB