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2SC1384 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1384

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO92

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2SC1384 Datasheet (PDF)

1.1. 2sc1383 2sc1384.pdf Size:47K _panasonic

2SC1384
2SC1384

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA683 and 2SA684 5.9± 0.2 4.9± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7± 0.1 Absolute Maximum Ratings (Ta=25˚C) 2.54± 0.15 Parameter Symbol Ratings Unit

1.2. 2sc1384.pdf Size:245K _utc

2SC1384
2SC1384

UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC1384 is power amplifier and driver. FEATURES * Low VCE(SAT) * 2~3W output in complementary pair with 2SA684 Lead-free: 2SC1384L Halogen-free: 2SC1384G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen-Free

 1.3. 2sc1383-2sc1384.pdf Size:245K _lge

2SC1384
2SC1384

 2SC1383/2SC1384 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low collector to emitter saturation voltage VCE(sat). 7.800 8.200 Complementary pair with 2SA0683 and 2SA0684. 0.600 0.800 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units 0.350 VCBO Collector-Base Voltage 30 60 V 0.550

1.4. 2sc1383-2sc1384 to-92mod.pdf Size:245K _lge

2SC1384
2SC1384

 2SC1383/2SC1384 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3.BASE 3 Features 5.800 Low collector to emitter saturation voltage VCE(sat). 6.200 Complementary pair with 2SA0683 and 2SA0684. 8.400 8.800 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 0.900 1.100 Symbol Parameter 2SC1383 2SC1384 Units 0.400 0.600 VCBO Collector-Base Voltage 30

 1.5. st2sc1383 st2sc1384.pdf Size:514K _semtech

2SC1384
2SC1384

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Co

1.6. 2sc1384 3da1384.pdf Size:193K _lzg

2SC1384
2SC1384

2SC1384(3DA1384) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和驱动。 Purpose: AF power amplifier and driver applications. 特点:饱和压降低,与 2SA684(3CA684)互补可得 2~3 瓦输出。 Features: Low V ,2~3W output in complementary pair with 2SA684(3CA684). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数

1.7. 2sc1383 2sc1384.pdf Size:166K _tgs

2SC1384
2SC1384

TIGER ELECTRONIC CO.,LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 TRANSISTOR (NPN) TO-92L 2SC1384 FEATURES 1.EMITTER Low collector to emitter saturation voltage VCE(sat). 2.COLLECTOR Complementary pair with 2SA0683 and 2SA0684. 3.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2SC1383 2SC1384 Units VCBO Collector-Base Voltage 30 60 V

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