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2SC144 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC144
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 225 MHz
   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: TO18
 

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2SC144 Datasheet (PDF)

 0.1. Size:180K  inchange semiconductor
 2sc1444.pdf pdf_icon

2SC144

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1444DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8

 0.2. Size:185K  inchange semiconductor
 2sc1447.pdf pdf_icon

2SC144

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1447DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 0.3. Size:177K  inchange semiconductor
 2sc1441.pdf pdf_icon

2SC144

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1441DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 0.4. Size:183K  inchange semiconductor
 2sc1449.pdf pdf_icon

2SC144

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1449DESCRIPTIONHigh Collector Current I = 2.0ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB

MOSTRAR MÁS

Otros transistores... 2SC1433 , 2SC1434 , 2SC1435 , 2SC1436 , 2SC1437 , 2SC1438 , 2SC1439 , 2SC143A , A1941 , 2SC1440 , 2SC1441 , 2SC1442 , 2SC1443 , 2SC1444 , 2SC1445 , 2SC1446 , 2SC1446P .

 

 
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