2SC1444 Todos los transistores

 

2SC1444 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC1444
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO66
 

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2SC1444 datasheet

 ..1. Size:180K  inchange semiconductor
2sc1444.pdf pdf_icon

2SC1444

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1444 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8

 8.1. Size:185K  inchange semiconductor
2sc1447.pdf pdf_icon

2SC1444

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1447 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 8.2. Size:177K  inchange semiconductor
2sc1441.pdf pdf_icon

2SC1444

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1441 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 8.3. Size:183K  inchange semiconductor
2sc1449.pdf pdf_icon

2SC1444

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1449 DESCRIPTION High Collector Current I = 2.0A C Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. AB

Otros transistores... 2SC1438 , 2SC1439 , 2SC143A , 2SC144 , 2SC1440 , 2SC1441 , 2SC1442 , 2SC1443 , TIP3055 , 2SC1445 , 2SC1446 , 2SC1446P , 2SC1446Q , 2SC1446R , 2SC1447 , 2SC1448 , 2SC1448A .

 

 
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