2SC1448 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1448
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SC1448
2SC1448 Datasheet (PDF)
2sc1448.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1448DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sc1444.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1444DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8
2sc1447.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1447DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sc1441.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1441DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sc1449.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1449DESCRIPTIONHigh Collector Current I = 2.0ACCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.AB
2sc1446.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1446DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
2sc1445.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1445DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1
2sc1440.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1440DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
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