2SC1467 Todos los transistores

 

2SC1467 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1467

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 5 MHz

Capacitancia de salida (Cc): 120 pF

Ganancia de corriente contínua (hfe): 8

Empaquetado / Estuche: TO66

Búsqueda de reemplazo de transistor bipolar 2SC1467

 

2SC1467 Datasheet (PDF)

4.1. 2sc1469.pdf Size:178K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1469 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.1. 2sc1473 e.pdf Size:51K _panasonic

2SC1467
2SC1467

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0± 0.2 4.0± 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector t

5.2. 2sc1473.pdf Size:47K _panasonic

2SC1467
2SC1467

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0± 0.2 4.0± 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector t

 5.3. 2sc1472.pdf Size:47K _hitachi

2SC1467
2SC1467

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current

5.4. 2sc1475.pdf Size:126K _no

2SC1467
2SC1467



 5.5. 2sc1426.pdf Size:340K _no

2SC1467
2SC1467



5.6. 2sc1402.pdf Size:104K _savantic

2SC1467
2SC1467

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

5.7. 2sc1413a.pdf Size:30K _wingshing

2SC1467

NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25°C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current

5.8. 2sc1454.pdf Size:66K _wingshing

2SC1467

2SC1454 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-3 ABSOLUTE MAXIMUM RATINGS (T =25℃ ℃) ℃ ℃ A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 40 A Collector Dissipation (Tc=25℃ PC 50 W ℃ ℃ ℃ Junction Temperature Tj 150

5.9. 2sc1441.pdf Size:177K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1441 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.10. 2sc1413a.pdf Size:205K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1413A DESCRIPTION ·High Collector-base breakdown voltage:1500V ·Low saturation voltage@5A ·Large area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the horizontal output stage in power-transformer-less television receivers. ABSOLUTE MAXIMU

5.11. 2sc1454.pdf Size:176K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1454 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.12. 2sc1418.pdf Size:185K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1418 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.13. 2sc1450.pdf Size:179K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1450 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1

5.14. 2sc1456.pdf Size:179K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1456 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 3

5.15. 2sc1445.pdf Size:180K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1445 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1

5.16. 2sc1402.pdf Size:102K _inchange_semiconductor

2SC1467
2SC1467

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

5.17. 2sc1433.pdf Size:177K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1433 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.18. 2sc1447.pdf Size:185K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1447 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.19. 2sc1448.pdf Size:184K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1448 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.20. 2sc1446.pdf Size:184K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1446 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.21. 2sc1431.pdf Size:177K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1431 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.22. 2sc1419.pdf Size:185K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1419 DESCRIPTION ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Car radio,car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

5.23. 2sc1449.pdf Size:183K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1449 DESCRIPTION ·High Collector Current I = 2.0A C ·Collector-Emitter Breakdown Voltage- : V = 35V(Min) (BR)CEO ·Good Linearity of h FE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. AB

5.24. 2sc1403.pdf Size:202K _inchange_semiconductor

2SC1467
2SC1467

isc Silicon NPN Power Transistor 2SC1403 DESCRIPTION ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Bas

5.25. 2sc1444.pdf Size:180K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1444 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 8

5.26. 2sc1440.pdf Size:177K _inchange_semiconductor

2SC1467
2SC1467

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1440 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.27. 2sc1413.pdf Size:127K _inchange_semiconductor

2SC1467
2SC1467

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDI

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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