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2SC158 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC158
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.125 W
   Tensión colector-base (Vcb): 20 V
   Tensión emisor-base (Veb): 1 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2SC158

 

2SC158 Datasheet (PDF)

 0.1. Size:144K  no
2sc1583.pdf

2SC158
2SC158

 0.2. Size:177K  inchange semiconductor
2sc1580.pdf

2SC158
2SC158

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1580DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 0.3. Size:177K  inchange semiconductor
2sc1586.pdf

2SC158
2SC158

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1586DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 0.4. Size:177K  inchange semiconductor
2sc1585.pdf

2SC158
2SC158

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1585DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage

 0.5. Size:208K  inchange semiconductor
2sc1584.pdf

2SC158
2SC158

isc Silicon NPN PowerTransistor 2SC1584DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SA907Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

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History: 2SC154H

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