2SC1623L3
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1623L3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90
MHz
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar 2SC1623L3
2SC1623L3
Datasheet (PDF)
6.1. Size:563K slkor
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
2SC1623TRANSISTOR (NPN) TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -C
6.2. Size:551K umw-ic
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
RUMW UMW 2SC1623SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitte
6.3. Size:207K powersilicon
2sc1623l4-t3 2sc1623l5-t3 2sc1623l6-t3 2sc1623l7-t3.pdf
2SC1623PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current GainhFE=200(Typ.) VCE=6V, IC=1mA High VoltageVCEO = 50V MECHANICAL DATA Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623--T3 SOT-23 Tape Reel See Classifica
6.5. Size:784K cn shandong jingdao microelectronics
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
Jingdao Microelectronics co.LTD 2SC16232SC1623 SOT-23NPN TRANSISTOR3FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASESymbolParameter Value Unit 2.EMITTER3.COLLECTORCollectorBase Voltage VCBO 60 VCollectorEmit
6.7. Size:914K cn yongyutai
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
2SC1623SOT323 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 100 m
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