All Transistors. 2SC1623L3 Datasheet

 

2SC1623L3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC1623L3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO236

 2SC1623L3 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC1623L3 Datasheet (PDF)

 6.1. Size:563K  slkor
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf

2SC1623L3

2SC1623TRANSISTOR (NPN) TRANSISTOR (NPN)FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value UnitVCBO 60 V Collector-Base Voltage 50 VVCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V2. EMITTER 3. COLLECTOR IC Collector Current -C

 6.2. Size:551K  umw-ic
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf

2SC1623L3
2SC1623L3

RUMW UMW 2SC1623SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitte

 6.3. Size:207K  powersilicon
2sc1623l4-t3 2sc1623l5-t3 2sc1623l6-t3 2sc1623l7-t3.pdf

2SC1623L3
2SC1623L3

2SC1623PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current GainhFE=200(Typ.) VCE=6V, IC=1mA High VoltageVCEO = 50V MECHANICAL DATA Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623--T3 SOT-23 Tape Reel See Classifica

 6.4. Size:909K  cn salltech
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf

2SC1623L3
2SC1623L3

 6.5. Size:784K  cn shandong jingdao microelectronics
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf

2SC1623L3
2SC1623L3

Jingdao Microelectronics co.LTD 2SC16232SC1623 SOT-23NPN TRANSISTOR3FEATURES High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA High voltage:VCEO=50V 12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASESymbolParameter Value Unit 2.EMITTER3.COLLECTORCollectorBase Voltage VCBO 60 VCollectorEmit

 6.6. Size:1126K  cn shikues
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf

2SC1623L3
2SC1623L3

 6.7. Size:914K  cn yongyutai
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf

2SC1623L3
2SC1623L3

2SC1623SOT323 TRANSISTOR (NPN) FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit3. COLLECTOR VCBO 60 VCollector-Base Voltage 50 VVCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 100 m

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SB968 | FJC790 | 2N972

 

 
Back to Top