2SC1766 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SC1766 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Small Flat Package High Speed Switching Time3. EMITTER Low Collector-emitter saturation voltageAPPLICATIONS Power AmplifierMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitVCBO Collector

2SC1766 SOT-89-3L TRANSISTOR(NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power AmplifierMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage

FM120-M WILLASTHRU2SC1766SOT-89 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesTRANSISTOR (NPN) Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-89 FEATURES SOD-123H Low profile surface

CHENMKO ENTERPRISE CO.,LTD2SC1766GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)C* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.* High sat

Ordering number:EN429ENPN Triple Diffused Planar Silicon Transistor2SC1755TV Chroma, Video, Audio Output ApplicationsPackage Dimensionsunit:mm2010C[2SC1755]JEDEC : TO-220AB 1 : BaseEIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 300 VCollector-to-Emitter

2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC1741S Features External dimensions (Units : mm) 1) High ICMax. 2SC1741SICMax. = 0.5A 2) Low VCE(sat). 40.2 20.2Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. 0.45+0.15-0.05 Structure Epitaxial planar type 0.45+0.152.5+0.4 0.5 -0.05-0.15NPN silicon tra

2SD1949 / 2SD1484K / 2SC1741STransistorsTransistors2SC3359S(96-678-D15)(SPEC-D16)318

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

2SC2411K / 2SC4097 / 2SC1741STransistorsMedium Power Transistor (32V, 0.5A)2SC2411K / 2SC4097 / 2SC1741S Features External dimensions (Units : mm)1) High ICMax.2SC2411K 2SC4097ICMax. = 0.5mA2.90.22) Low VCE(sat).1.1+0.2 2.00.21.90.2 -0.11.30.1 0.90.10.80.10.95 0.95Optimal for low voltage operation.0.65 0.65 0.70.10.2(1) (2) (1) (2)3) Complemen

MCCMicro Commercial Components 2SC1740S-QTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC1740S-RPhone: (818) 701-49332SC1740S-SFax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPNCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity

2SC1775, 2SC1775ASilicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA872/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1775, 2SC1775AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SC1775 2SC1775A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to base voltag

2SC1740S 0.15A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Cob CLASSIFICATION OF hFE Millimeter REF. Min. Max. A 3.90 4.10 Product-Rank 2SC1740S-Q 2SC1740S-R 2SC1740S-S B 3.05 3.25 C 1.42 1.62 Range 120~270 180~390 270~560 D 15.1 15.5 E 2.9

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors2SC1740S TRANSISTOR (NPN)TO-92S FEATURES 1. EMITTERLow Cob2. COLLECTOR3. BASE Equivalent Circuit C1740C1740=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Package Packing Method Pack

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC1741S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High IC 3. BASE Low VCE(sat). Optimal for Low Voltage Operation Complements the 2SA854S MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Col

JMnic Product Specification Silicon NPN Power Transistors 2SC1755 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volt

JMnic Product SpecificationSilicon NPN Power Transistors 2SC1756 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

2SC1740S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features Low CobMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction Te

2SC1740M(BR3DG1740M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , 2SA933M(BR3CG933M)Small base output capacitance, complementary pair with 2SA933M(BR3CG933M). / Applications General purpose a

2SC1741AM(BR3DG1741AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,V CE(sat)High IC, Low VCE(sat) / Applications Medium power transistor. / Equivalent Circuit

SUNROC 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 3. BASE VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V 1 2 3 VEBO Emitter-Base Voltage 7 V IC Collector Current Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction

isc Silicon NPN Power Transistor 2SC1755DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-:V = 300V(Min)(BR)CEODC Current Gain-: h = 40-200 @I = 10mA, V = 10VFE C CEHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma, video , audio outputapplications.A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1723DESCRIPTIONSilicon NPN triple diffused LTPHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency high voltage power amplifierTV power supply driversABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1756DESCRIPTIONHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF output of color TV for video outputAF output of B/W TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1722DESCRIPTIONSilicon NPN triple diffused mesaHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifierTV horizontal/vertical driversABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1777DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 70V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC1730DESCRIPTIONLow Base Time Constant;r = 10 ps TYP.bb CCHigh Gain Bandwidth Productf = 1100 MHz TYP.TLow Output Capacitance;C = 1.5 pF Max.OBMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV VHF, UHF tuner oscillator applications.ABS

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1785DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 200V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1783DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 120V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAutomotive ignitionSwitching regulatorMotor control applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA