2SC1766 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC1766
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 115 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO92
2SC1766 Transistor Equivalent Substitute - Cross-Reference Search
2SC1766 Datasheet (PDF)
1.1. 2sc1766gp.pdf 
Size:128K _update
CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.) C * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. * High sat
1.2. 2sc1766.pdf Size:372K _htsemi
2SC1766 SOT-89-3L TRANSISTOR(NPN) FEATURES 1. BASE Small Flat Package 2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power Amplifier MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V
1.3. 2sc1766.pdf Size:356K _willas
FM120-M WILLAS THRU 2SC1766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features TRANSISTOR (NPN) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-89 FEATURES SOD-123H • Low profile surface mo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
