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2SA200-O Specs and Replacement


   Type Designator: 2SA200-O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200(typ) MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92

 2SA200-O Transistor Equivalent Substitute - Cross-Reference Search

   

2SA200-O detailed specifications

 ..1. Size:452K  semtech
2sa200-y 2sa200-o.pdf pdf_icon

2SA200-O

ST 2SA200 PNP Silicon Epitaxial Planar Transistor for general purpose and switching amplifier The transistor is subdivided into two group, O and Y according to its DC current gain. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 60 V Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO ... See More ⇒

 8.1. Size:52K  rohm
2sa2007.pdf pdf_icon

2SA200-O

2SA2007 Transistors High-speed Switching Transistor (-60V,-12A) 2SA2007 External dimensions (Units mm) Features 1) High switching speed. 10.0 4.5 (Typ. tf = 0.15 s at Ic = -6A) 3.2 2.8 2) Low saturation voltage. (Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SC5526. 0.8 ( ) (1) Base Gate 0.75 2.54 2.5... See More ⇒

 8.2. Size:51K  rohm
2sa2005.pdf pdf_icon

2SA200-O

2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V, -1.5A) 2SA2005 Features External dimensions (Units mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = -160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 4) Wide SOA (safe operating area). 5) Complements the 2SC5511. 1.2 1.... See More ⇒

 8.3. Size:62K  panasonic
2sa2004.pdf pdf_icon

2SA200-O

Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 For power amplification 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV High-speed switching 1.4 0.2 2.6 0.1 1.6 0.2 0.8 0.1 0.55 0.15... See More ⇒

Detailed specifications: 2SC3357-E , 2SC3357-F , 2SC4226-R23 , 2SC945-H , 2SC945-L , 2SD882-E , 2SD882-P , 2SD882-Q , TIP41C , 2SA200-Y , SBT42 , GA1A4M , , , , , .

Keywords - 2SA200-O transistor specs

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