All Transistors. GA1A4M Datasheet

 

GA1A4M Datasheet and Replacement


   Type Designator: GA1A4M
   SMD Transistor Code: L33
   Material of Transistor: Si
   Polarity: NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SC70
 

 GA1A4M Substitution

   - BJT ⓘ Cross-Reference Search

   

GA1A4M Datasheet (PDF)

 ..1. Size:182K  nec
ga1a4m.pdf pdf_icon

GA1A4M

Datasheet: 2SC945-H , 2SC945-L , 2SD882-E , 2SD882-P , 2SD882-Q , 2SA200-O , 2SA200-Y , SBT42 , C1815 , , , , , , , , .

History: BU2507DF | GA4L4L | ZTX530K | CTD1322 | GC515

Keywords - GA1A4M transistor datasheet

 GA1A4M cross reference
 GA1A4M equivalent finder
 GA1A4M lookup
 GA1A4M substitution
 GA1A4M replacement

 

 
Back to Top

 


 
.