GA1A4M PDF and Equivalents Search

 

GA1A4M PDF Specs and Replacement

   Type Designator: GA1A4M
   SMD Transistor Code: L33
   Material of Transistor: Si
   Polarity: NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SC70
     - BJT ⓘ Cross-Reference Search