GA1A4M PDF and Equivalents Search

GA1A4M Specs and Replacement

Type Designator: GA1A4M

SMD Transistor Code: L33

Material of Transistor: Si

Polarity: NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SC70

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GA1A4M datasheet

Detailed specifications: 2SC945-H, 2SC945-L, 2SD882-E, 2SD882-P, 2SD882-Q, 2SA200-O, 2SA200-Y, SBT42, 2N2222

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