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2SC1815 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC1815
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SC1815

 

2SC1815 Datasheet (PDF)

 ..1. Size:272K  toshiba
2sc1815.pdf

2SC1815 2SC1815

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

 ..2. Size:235K  utc
2sc1815.pdf

2SC1815 2SC1815

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BV =50V CEO* Collector current up to 150mA * High h linearity FE* Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen

 ..3. Size:186K  jiangsu
2sc1815.pdf

2SC1815 2SC1815

2S Equivalent Circuit

 ..4. Size:1213K  htsemi
2sc1815.pdf

2SC1815 2SC1815

2SC1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING : 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW

 ..5. Size:1131K  lge
2sc1815.pdf

2SC1815 2SC1815

2SC1815 Silicon Epitaxial Planar TransistorFEATURES A High voltage and high current SOT-23 Dim Min MaxVCEO=50V(Min),IC=150mA(Max). A 2.70 3.10E Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA B 1.10 1.50K B hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) C 1.0 TypicalD 0.4 Typical Low noise.E 0.35 0.48JD Complementary to 2SA1015. G 1.80 2.00APPLIC

 ..6. Size:544K  shenzhen
2sc1815.pdf

2SC1815 2SC1815

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

 ..7. Size:853K  blue-rocket-elect
2sc1815.pdf

2SC1815 2SC1815

2SC1815 Rev.E Nov.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,, h ,, 2SA1015 FEHigh voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. / Applications

 ..8. Size:945K  kexin
2sc1815.pdf

2SC1815 2SC1815

SMD Type orSMD Type TransistICsNPN Transistors2SC1815SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Power dissipation+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 60 VCollector to Emitter Voltage VCEO 50 VEmitter to Base Voltage VE

 ..9. Size:604K  mdd
2sc1815.pdf

2SC1815 2SC1815

2SC1815 SOT-23 Plastic-Encapsulate Transistors2SC1815 TRANSISTOR (NPN)SOT-23 FEATURES Power dissipation MARKING:2SC1815=HF 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector to Base Voltage 60 V CBOV Collector to Emitter Voltage 50 V CEOVEBO Emitter to Base Voltage 5 V IC Collector Current

 ..10. Size:920K  cn yongyutai
2sc1815.pdf

2SC1815 2SC1815

2SC1815SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES MARKING:HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Volta

 ..11. Size:1732K  cn twgmc
2sc1815.pdf

2SC1815 2SC1815

2SC18152 SC1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1BASE 2EMITTER 3COLLECTOR MARKING : HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mAPC Collector Power Dissipation 200 mWT

 ..12. Size:2041K  cn goodwork
2sc1815.pdf

2SC1815 2SC1815

2SC1815NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 200mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=50V.Collector current IC=0.15A.ansition frequency fT>80MHz @ TrIC=1mAdc, VCE=10Vdc, f=30MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Solde

 ..13. Size:1084K  cn hottech
2sc1815.pdf

2SC1815 2SC1815

2SC1815BIPOLAR TRANSISTOR (NPN)FEATURES High current And High voltage Excellent h LinearityFE Low Noise Surface Mount device Complementary to 2SA1015SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise no

 ..14. Size:175K  inchange semiconductor
2sc1815.pdf

2SC1815 2SC1815

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1815DESCRIPTIONHigh Voltage and High CurrentVceo=50V(Min.Ic=150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SA1015(O,Y,GR class)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver sta

 0.1. Size:213K  toshiba
2sc1815-t.pdf

2SC1815 2SC1815

 0.2. Size:308K  toshiba
2sc1815l.pdf

2SC1815 2SC1815

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA)

 0.3. Size:272K  toshiba
2sc1815-o 2sc1815-y 2sc1815-gr 2sc1815-bl.pdf

2SC1815 2SC1815

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

 0.4. Size:368K  mcc
2sc1815-bl-gr-o-y.pdf

2SC1815 2SC1815

2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial

 0.5. Size:168K  microelectronics
2sc1815-m.pdf

2SC1815 2SC1815

 0.6. Size:887K  blue-rocket-elect
2sc1815m.pdf

2SC1815 2SC1815

2SC1815M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,, h ,FEHigh voltage and high current, excellent hFE linearity ,low noise. / Applications ,A

 0.7. Size:138K  semtech
2sc1815o 2sc1815y 2sc1815g 2sc1815l.pdf

2SC1815 2SC1815

2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor 2SA1015 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations.

 0.8. Size:122K  hfzt
2sc1815lt1.pdf

2SC1815

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25* PD 225 mWNO

 0.9. Size:521K  slkor
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf

2SC1815

2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1:RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R

 0.10. Size:774K  slkor
2sc1815o 2sc1815q 2sc1815gr 2sc1815bl.pdf

2SC1815 2SC1815

2SC1815 Equivalent Circuit Collector-Base Voltage 60 V Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.15 A Collector Power D

 0.11. Size:4258K  msksemi
2sc1815-ms.pdf

2SC1815 2SC1815

www.msksemi.com2SC1815-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Power dissipation 1. BASEMARKING : HF 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBOI Collector Cur

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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