2SC1826
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1826
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SC1826
2SC1826
Datasheet (PDF)
..1. Size:184K inchange semiconductor
2sc1826.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1826DESCRIPTIONHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
8.1. Size:69K wingshing
2sc1827.pdf
2SC1827 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA769ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junctio
8.2. Size:146K jmnic
2sc1827.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC=4A Collector dissipation :PC=30W@TC=25 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
8.3. Size:179K inchange semiconductor
2sc1828.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1828DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8
8.4. Size:192K inchange semiconductor
2sc1827.pdf
isc Silicon NPN Power Transistor 2SC1827DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEOComplement to Type 2SA769Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.