2SC188
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC188
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75
MHz
Capacitancia de salida (Cc): 15
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2SC188
2SC188
Datasheet (PDF)
0.1. Size:35K hitachi
2sc1881.pdf 
2SC1881(K)Silicon NPN Triple DiffusedApplicationHigh gain amplifier power switchingOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6.8 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current I
0.2. Size:215K inchange semiconductor
2sc1881k.pdf
isc Silicon NPN Darlington Power Transistor 2SC1881KDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High g
0.3. Size:214K inchange semiconductor
2sc1881.pdf
isc Silicon NPN Darlington Power Transistor 2SC1881DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High ga
0.4. Size:186K inchange semiconductor
2sc1880.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC1880DESCRIPTIONHigh DC Current GainCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
