2SC1882 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1882  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 25 MHz

Capacitancia de salida (Cc): 29 pF

Ganancia de corriente contínua (hFE): 5000

Encapsulados: TO12

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2SC1882 datasheet

 8.1. Size:35K  hitachi
 2sc1881.pdf pdf_icon

2SC1882

2SC1881(K) Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6.8 k 400 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current I

 8.2. Size:215K  inchange semiconductor
 2sc1881k.pdf pdf_icon

2SC1882

isc Silicon NPN Darlington Power Transistor 2SC1881K DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High g

 8.3. Size:214K  inchange semiconductor
 2sc1881.pdf pdf_icon

2SC1882

isc Silicon NPN Darlington Power Transistor 2SC1881 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.2V(Max)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for High ga

 8.4. Size:186K  inchange semiconductor
 2sc1880.pdf pdf_icon

2SC1882

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC1880 DESCRIPTION High DC Current Gain Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and

MOSTRAR MÁS

Otros transistores... 2SC1876H, 2SC1879, 2SC1879H, 2SC188, 2SC1880, 2SC1880K, 2SC1881, 2SC1881K, BC547, 2SC1882H, 2SC1883, 2SC1883K, 2SC1884, 2SC1884H, 2SC1885, 2SC1886, 2SC1887