All Transistors. 2SC1882 Datasheet

 

2SC1882 Datasheet and Replacement


   Type Designator: 2SC1882
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 29 pF
   Forward Current Transfer Ratio (hFE), MIN: 5000
   Noise Figure, dB: -
   Package: TO12
 

 2SC1882 Substitution

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2SC1882 Datasheet (PDF)

 8.1. Size:35K  hitachi
 2sc1881.pdf pdf_icon

2SC1882

2SC1881(K)Silicon NPN Triple DiffusedApplicationHigh gain amplifier power switchingOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6.8 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current I

 8.2. Size:215K  inchange semiconductor
 2sc1881k.pdf pdf_icon

2SC1882

isc Silicon NPN Darlington Power Transistor 2SC1881KDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High g

 8.3. Size:214K  inchange semiconductor
 2sc1881.pdf pdf_icon

2SC1882

isc Silicon NPN Darlington Power Transistor 2SC1881DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High ga

 8.4. Size:186K  inchange semiconductor
 2sc1880.pdf pdf_icon

2SC1882

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC1880DESCRIPTIONHigh DC Current GainCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1825 | TP5401 | STTIP32C | KC856W | KSD5005 | NB211YJ | MJE5741

Keywords - 2SC1882 transistor datasheet

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