2SC1882H Todos los transistores

 

2SC1882H . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC1882H
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 8 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 29 pF
   Ganancia de corriente contínua (hfe): 5000
   Paquete / Cubierta: TO12
 

 Búsqueda de reemplazo de 2SC1882H

   - Selección ⓘ de transistores por parámetros

 

2SC1882H Datasheet (PDF)

 8.1. Size:35K  hitachi
 2sc1881.pdf pdf_icon

2SC1882H

2SC1881(K)Silicon NPN Triple DiffusedApplicationHigh gain amplifier power switchingOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6.8 k 400 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current I

 8.2. Size:215K  inchange semiconductor
 2sc1881k.pdf pdf_icon

2SC1882H

isc Silicon NPN Darlington Power Transistor 2SC1881KDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High g

 8.3. Size:214K  inchange semiconductor
 2sc1881.pdf pdf_icon

2SC1882H

isc Silicon NPN Darlington Power Transistor 2SC1881DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.2V(Max)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for High ga

 8.4. Size:186K  inchange semiconductor
 2sc1880.pdf pdf_icon

2SC1882H

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC1880DESCRIPTIONHigh DC Current GainCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and

MOSTRAR MÁS

Otros transistores... 2SC1879 , 2SC1879H , 2SC188 , 2SC1880 , 2SC1880K , 2SC1881 , 2SC1881K , 2SC1882 , BD139 , 2SC1883 , 2SC1883K , 2SC1884 , 2SC1884H , 2SC1885 , 2SC1886 , 2SC1887 , 2SC1888 .

History: CHUMB9GP | 2SC374B | BC328-25BK | 2SC3897 | CD9000 | MMBTRC103SS | A159

 

 
Back to Top

 


 
.