2SC1942 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JMnic Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

isc Silicon NPN Power Transistor 2SC1942DESCRIPTIONHigh Voltage-V = 1500V(Min.)CEXCollector Current- I = 3.0ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 1500 VCE

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta == 25C) ==

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltag

DATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHINGINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThe 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters)+0.3consists of two chips equivalent to the 2SC1275, and is designed for5.0 MIN. 3.5 0.2 5.0 MIN.differential amplifier an

2SC1959-OMCCMicro Commercial ComponentsTM2SC1959-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SC1959-GRFax: (818) 701-4939Features Audio frequency low power amplifier applications, driver stage Power Siliconamplifier applications, switching applications Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA

Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt

Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitt

2SC1907Silicon NPN Epitaxial PlanarApplicationUHF TV Tuner, Local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC1907Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 19 VEmitter to base voltage VEBO 2VCollector current IC 50 mAEmitter current IE 50 mACollect

2SC1921Silicon NPN Triple DiffusedApplication High frequency high voltage amplifier Video outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SC1921Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 250 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5VCollector current IC 50 mACollect

2SC1906Silicon NPN Epitaxial PlanarADE-208-1058 (Z)1st. EditionMar. 2001Application VHF amplifier Mixer, Local oscillatorOutlineTO-92 (2)1. Emitter2. Collector3. Base3212SC1906Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 19 VEmitter to base voltage VEBO 2VColle

2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency MillimeterREF.Min. Max.A 4.40 4.70B 4.30 4.70C 12.70 -CLASSIFICATION OF hFE D 3.30 3.81E 0.36 0.56Product-Rank 2SC1959-O 2SC1959-

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES AD General purpose switching and amplification. BCLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E CFRange 70~140 100~200G HEmitterMARKING CollectorBase JC1923

2SC1983 NPN SILICON DARLINGTON TRANSISTORSWITCHING REGULATORS PWM INVERTERSSOLENOID AND RELAY DRIVERSSC-65ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1923 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and sy

JMnic Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION With TO-220C package High breakdown voltage Large collector power dissipation APPLICATIONS Color TV horizontal deflection driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

2SC1959(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 0.5 A PC Collector Power Dissipation 500 mW

2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SA562M(BR3CG562M)FEExcellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). / Applications ,

DIP Type TransistorsNPN Transistors2SC1923Unit:mmTO-924.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V0.60 Max General Purpose Switching Application0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1986DESCRIPTIONSilicon NPN tripe diffused mesaCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral and industrial purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1985DESCRIPTIONSilicon NPN tripe diffused mesaCollector-Emitter Breakdown Voltage-:V = 60(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral and industrial purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1975DESCRIPTIONCollector-Base Breakdown Voltage: V =160V(Min)(BR)CBOWithstands worst overload conditions.100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign for used in transceiver power output applicationsABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1985 2SC1986 DESCRIPTION With TO-220 package Complement to type 2SA770/771 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25

isc Silicon NPN Power Transistor 2SC1971DESCRIPTIONHigh Power Gain-: G 7dB, P = 6W; V = 13.5Vpe O CEHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC1907DESCRIPTIONLow NoiseHigh Gain Bandwidth Product100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF TV tuner and local oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1922DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

isc Silicon NPN Power Transistor 2SC1953DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA914Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power pre-amplification,whichis optimum for the pre-driver stage of a 60 W to 100 W

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1929DESCRIPTIONSi NPN planarCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF output for direct main operation TVABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symb

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1904DESCRIPTIONLow collector to emitter saturation voltageOutput of 1W can be obtained by a complementarywith 2SA899100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc Silicon NPN RF Power Transistor 2SC1969DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplif

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC1906DESCRIPTIONLow NoiseHigh Gain Bandwidth Product100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF amplifier,mixer and local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1970DESCRIPTIONHigh Power Gain-: G 9.2dB,f= 175MHz, P = 1W; V = 13.5Vpe O CCHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for RF power amplifiers on VHF band mobile radioapplications.ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1913DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency high power driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1905DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV