2SC1942 - Даташиты. Аналоги. Основные параметры

JMnic Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

isc Silicon NPN Power Transistor 2SC1942 DESCRIPTION High Voltage-V = 1500V(Min.) CEX Collector Current- I = 3.0A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 1500 V CE

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity h = 25 (min) V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta = = 25 C) = =

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.7 pF (typ.) Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltag

DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters) +0.3 consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN. 3.5 0.2 5.0 MIN. differential amplifier an

2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC1959-GR Fax (818) 701-4939 Features Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications Excellent hFE Linearity hFE(2) =25(Min.) VCE=6.0V, IC=400mA

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt

2SC1907 Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1907 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Emitter current IE 50 mA Collect

2SC1921 Silicon NPN Triple Diffused Application High frequency high voltage amplifier Video output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC1921 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collect

2SC1906 Silicon NPN Epitaxial Planar ADE-208-1058 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1906 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Colle

2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.30 3.81 E 0.36 0.56 Product-Rank 2SC1959-O 2SC1959-

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES A D General purpose switching and amplification. B CLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E C F Range 70 140 100 200 G H Emitter MARKING Collector Base J C1923

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SC1923 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V

JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and sy

JMnic Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION With TO-220C package High breakdown voltage Large collector power dissipation APPLICATIONS Color TV horizontal deflection driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

2SC1959(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 0.5 A PC Collector Power Dissipation 500 mW

2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SA562M(BR3CG562M) FE Excellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). / Applications ,

DIP Type Transistors NPN Transistors 2SC1923 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V 0.60 Max General Purpose Switching Application 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1986 DESCRIPTION Silicon NPN tripe diffused mesa Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General and industrial purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1985 DESCRIPTION Silicon NPN tripe diffused mesa Collector-Emitter Breakdown Voltage- V = 60(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General and industrial purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1975 DESCRIPTION Collector-Base Breakdown Voltage V =160V(Min) (BR)CBO Withstands worst overload conditions. 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION High Power Gain- G 7dB, P = 6W; V = 13.5V pe O CE High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1907 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1922 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

isc Silicon NPN Power Transistor 2SC1953 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA914 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1929 DESCRIPTION Si NPN planar Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF output for direct main operation TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symb

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1904 DESCRIPTION Low collector to emitter saturation voltage Output of 1W can be obtained by a complementary with 2SA899 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

INCHANGE Semiconductor isc Silicon NPN RF Power Transistor 2SC1969 DESCRIPTION With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplif

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION High Power Gain- G 9.2dB,f= 175MHz, P = 1W; V = 13.5V pe O CC High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1913 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency high power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1905 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V