2SC1953 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1953
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 65
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SC1953
2SC1953 Datasheet (PDF)
2sc1953.pdf
isc Silicon NPN Power Transistor 2SC1953 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA914 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W
2sc1959.pdf
2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity h = 25 (min) V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta = = 25 C) = =
2sc1959-gr-o-y.pdf
2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC1959-GR Fax (818) 701-4939 Features Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications Excellent hFE Linearity hFE(2) =25(Min.) VCE=6.0V, IC=400mA
Otros transistores... 2SC1948-1 , 2SC1948-2 , 2SC1948-3 , 2SC1949 , 2SC195 , 2SC1950 , 2SC1951 , 2SC1952 , BD139 , 2SC1954 , 2SC1955 , 2SC1956 , 2SC1957 , 2SC1959 , 2SC1959GR , 2SC1959O , 2SC1959Y .
History: KSC815R | ISA1287AS1 | CHDTC125TUGP | CHT848BWGP | IMZ1A | DTL3427 | INC5006AC1
History: KSC815R | ISA1287AS1 | CHDTC125TUGP | CHT848BWGP | IMZ1A | DTL3427 | INC5006AC1
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
ksc3503 | c945 transistor datasheet | bt137 datasheet | 2n2907a datasheet | irfz24n | bd135 | d880 | 2n5457 equivalent







