2SC1953 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1953 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hFE): 65
Encapsulados: TO126
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2SC1953 datasheet
2sc1953.pdf
isc Silicon NPN Power Transistor 2SC1953 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA914 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W
2sc1959.pdf
2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity h = 25 (min) V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta = = 25 C) = =
2sc1959-gr-o-y.pdf
2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC1959-GR Fax (818) 701-4939 Features Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications Excellent hFE Linearity hFE(2) =25(Min.) VCE=6.0V, IC=400mA
Otros transistores... 2SC1948-1, 2SC1948-2, 2SC1948-3, 2SC1949, 2SC195, 2SC1950, 2SC1951, 2SC1952, BD139, 2SC1954, 2SC1955, 2SC1956, 2SC1957, 2SC1959, 2SC1959GR, 2SC1959O, 2SC1959Y
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