2SC1953 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1953
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 65
Paquete / Cubierta: TO126
Búsqueda de reemplazo de 2SC1953
2SC1953 Datasheet (PDF)
2sc1953.pdf

isc Silicon NPN Power Transistor 2SC1953DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA914Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power pre-amplification,whichis optimum for the pre-driver stage of a 60 W to 100 W
2sc1959.pdf

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta == 25C) ==
2sc1959-gr-o-y.pdf

2SC1959-OMCCMicro Commercial ComponentsTM2SC1959-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SC1959-GRFax: (818) 701-4939Features Audio frequency low power amplifier applications, driver stage Power Siliconamplifier applications, switching applications Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA
Otros transistores... 2SC1948-1 , 2SC1948-2 , 2SC1948-3 , 2SC1949 , 2SC195 , 2SC1950 , 2SC1951 , 2SC1952 , 2N5551 , 2SC1954 , 2SC1955 , 2SC1956 , 2SC1957 , 2SC1959 , 2SC1959GR , 2SC1959O , 2SC1959Y .
History: KSE44H-4 | 2SC1879



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