2SC2021
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2021
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180(typ)
MHz
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
FTR
- Selección de transistores por parámetros
2SC2021
Datasheet (PDF)
8.4. Size:23K sanken-ele
2sc2023.pdf 
2SC2023Silicon NPN Triple Diffused Planar TransistorApplication : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C)Symbol 2SC2023 Symbol Conditions 2SC2023Unit Unit0.24.80.210.20.12.0VCBO 300 ICBO VCB=300V 1.0maxV mAVCEO 300 IEBO VEB=6V 1.0maxV mAVEBO 6
8.5. Size:184K inchange semiconductor
2sc2022.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2022DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
8.6. Size:184K inchange semiconductor
2sc2023.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2023DESCRIPTIONSilicon NPN triple diffused planar transistorCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMU
8.7. Size:175K inchange semiconductor
2sc2026.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF
8.8. Size:177K inchange semiconductor
2sc2027.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2027DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.9. Size:184K inchange semiconductor
2sc2028.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2028DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
History: 2SC49
| S2530A
| BLX91A
| ET4039
| MJ10101
| 2SC3320T4TL
| TI810
