All Transistors. 2SC2021 Datasheet

 

2SC2021 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2021

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT33

2SC2021 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC2021 Datasheet (PDF)

1.1. 2sc2021.pdf Size:309K _rohm

2SC2021
2SC2021

4.1. 2sc2026.pdf Size:35K _nec

2SC2021

4.2. 2sc2028.pdf Size:66K _fuji

2SC2021

 4.3. 2sc2020.pdf Size:137K _sony

2SC2021
2SC2021

4.4. 2sc2023.pdf Size:23K _sanken-ele

2SC2021

2SC2023 Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C) Symbol 2SC2023 Symbol Conditions 2SC2023 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 300 ICBO VCB=300V 1.0max V mA VCEO 300 IEBO VEB=6V 1.0max V mA VEBO 6 V(BR)CEO

 4.5. 2sc2027.pdf Size:129K _inchange_semiconductor

2SC2021
2SC2021

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2027 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage ,power switching and TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMB

4.6. 2sc2022.pdf Size:56K _inchange_semiconductor

2SC2021
2SC2021

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2022 DESCRIPTION · ·With TO-220C package ·High voltage APPLICATIONS ·Series regulator, switch, and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col

4.7. 2sc2023.pdf Size:56K _inchange_semiconductor

2SC2021
2SC2021

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2023 DESCRIPTION · ·With TO-220C package ·High breakdown voltage APPLICATIONS ·Series regulator, switch, and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta

4.8. 2sc2026.pdf Size:73K _inchange_semiconductor

2SC2021
2SC2021

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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