2SC2027 Todos los transistores

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2027 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒

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2SC2023 Silicon NPN Triple Diffused Planar Transistor Application Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) (Ta=25 C) Symbol 2SC2023 Symbol Conditions 2SC2023 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 300 ICBO VCB=300V 1.0max V mA VCEO 300 IEBO VEB=6V 1.0max V mA VEBO 6 ... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2022 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2023 DESCRIPTION Silicon NPN triple diffused planar transistor Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMU... See More ⇒

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION Low Noise NF= 3.0dB TYP. @ f= 500MHz High Power Gain G = 15dB TYP. @ f= 500MHz pe High Gain Bandwidth Product f = 2.0GHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise amplifiers in the VHF... See More ⇒

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2028 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒