2SC2076 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2076 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 75 MHz
Capacitancia de salida (Cc): 2.5 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO92
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2SC2076 datasheet
8.1. Size:152K toshiba
2sc2075.pdf 
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8.3. Size:111K sanyo
2sc2078.pdf
Ordering number EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit mm 2010C [2SC2078] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCE
8.4. Size:502K jiangsu
2sc2073.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150
8.5. Size:218K lge
2sc2073.pdf
2SC2073(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Paramenter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C
8.6. Size:632K semtech
st2sc2073u.pdf
ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W To
8.8. Size:215K foshan
2sc2073 3da2073.pdf
2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications, vertical output applications. , 2SA940(3CA940) Features Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25 )
8.9. Size:521K slkor
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf
2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION B F SEATING T PLANE C 4 Designed primarily for SSB linear power T S amplifier applications A Q 1 2 3 H FEATURES U K Z Specified 12.5V, 27MHz Characteristics L PO = 4W PEP V ft = 200 MHz STYLE 1 R G PIN 1. BASE 2. COLLECTOR J D 3. EMITTER N 4. COLLECTOR DIMENSIONS UNIT A B C D F G H J K L N Q R
8.10. Size:1725K jsmsemi
2sc2073.pdf
2SC2073 NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications
8.11. Size:856K cn evvo
2sc2073.pdf
2SC2073 Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications
8.12. Size:1293K cn sps
2sc2073t1tl.pdf
2SC2073T1TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150
8.13. Size:421K cn sptech
2sc2073.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO
8.14. Size:192K inchange semiconductor
2sc2073.pdf
isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
8.15. Size:192K inchange semiconductor
2sc2075.pdf
isc Silicon NPN Power Transistor 2SC2075 DESCRIPTION High transition frequency Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 27MHz Power Amplifier Applications Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
8.16. Size:239K inchange semiconductor
2sc2078.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- VCER= 75V(Min) ;RBE=150 Collector Current- IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15
Otros transistores... 2SC2067, 2SC2068, 2SC2069, 2SC207, 2SC2070, 2SC2071, 2SC2073, 2SC2075, TIP31C, 2SC2078, 2SC2078B, 2SC2078C, 2SC2078D, 2SC2078E, 2SC2079, 2SC208, 2SC2080
