2SC2129 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2129
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SC2129
2SC2129 Datasheet (PDF)
2sc2120.pdf
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2sc2120-y.pdf
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2sc2120-o.pdf
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2sc2120.pdf
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2sc2120.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC2120 TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER High DC Current Gain Complementary to 2SA950 2. COLLECTOR3. BASE Equivalent Circuit C2120=Device code C2120 Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Pa
2sc2122.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2122DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 800 VCBO
2sc2123.pdf
isc Silicon NPN Power Transistor 2SC2123DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V (Min)(BR)CBOHigh Current CapabilityHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output and high power switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc2120.pdf
isc Silicon NPN Transistor 2SC2120DESCRIPTIONHigh hFE(1)=100-3201 Watts Amplifier ApplicationsComplement to Type 2SA950Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 35 VCBOV Collector-Emitter
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: GBD267 | MJE13003A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050