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2SC2143 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2143
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.21 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.03 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4500 MHz
   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT89

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2SC2143 Datasheet (PDF)

 8.1. Size:171K  nec
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf

2SC2143
2SC2143

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

 8.2. Size:52K  nec
2sc2148 2sc2149.pdf

2SC2143
2SC2143

DATA SHEETSILICON TRANSISTORS2SC2148, 2SC2149MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC2148, 2SC2149 are economical microwave transistorsPACKAGE DIMENSIONS (Unit : mm)encapsulated into new hermetic stripline packages, "micro X".These are designed for small signal amplifier, low noise amplifier,1and oscillator applications in the L to

 8.3. Size:39K  nec
2sc4185 2sc2148 ne73430 ne73435.pdf

2SC2143
2SC2143

NPN SILICON GENERAL NE734PURPOSE TRANSISTOR SERIESFEATURES LOW NOISE FIGURE:

 8.4. Size:37K  advanced-semi
2sc2149.pdf

2SC2143

2SC2149NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2SC2149 is Designed for PACKAGE STYLE .085 4LPILL Oscillator and Amplifier Applications up to 2.0 GHz.FEATURES INCLUDE: High insertion gain. High power gain. Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +2

 8.5. Size:209K  inchange semiconductor
2sc2140.pdf

2SC2143
2SC2143

isc Silicon NPN Power Transistor 2SC2140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

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History: 3CA168

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