2SC2238 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2238 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO220
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2SC2238 datasheet
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2sc2238.pdf 
isc Silicon NPN Power Transistor 2SC2238 DESCRIPTION Collector-Emitter Breakdown Voltage V =160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA968 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
..3. Size:202K inchange semiconductor
2sc2238 2sc2238a 2sc2238b.pdf
isc Silicon NPN Power Transistor 2SC2238 A B DESCRIPTION With TO-220 packaging Complement to Type 2SA968 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SC2238 160 V Collector-Base Voltage 2SC
0.1. Size:158K jmnic
2sc2238a.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION With TO-220 package Complement to type 2SA968 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 )
0.2. Size:222K inchange semiconductor
2sc2238b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2238B DESCRIPTION Collector-Emitter Breakdown Voltage V =200V (BR)CEO Good Linearity of h FE Complement to Type 2SA968B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =2
8.1. Size:122K toshiba
2sc2231.pdf
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8.5. Size:100K utc
2sc2235.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1 TO-92 FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2S
8.7. Size:306K secos
2sc2235tm.pdf
2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SA965 A D B CLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-Y K E F Range 80-160 120-240 C N G H Emitter Collector Base M J L Collector
8.8. Size:366K jiangsu
2sc2236.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR (NPN) 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE Equivalent Circuit C2236=Device code C2236 Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR
8.9. Size:226K lge
2sc2235 to-92l.pdf
2SC2235 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 4.700 5.100 2 3 1 Features 7.800 Complementary to 2SA965 B B 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units B 0.350 VCBOB Collector-Base Voltage 120 V B 0.550 13.800 VCEOB Collector-Emitter Voltage 120 V B 14.200 VEBOB Emitter-Base Volt
8.10. Size:355K lge
2sc2236 to-92l.pdf
2SC2236 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to 2SA966 and 3 Watts output Applications. 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitt
8.11. Size:339K lge
2sc2236 to-92mod.pdf
2SC2236 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA966 and 3 Watts output Applications. 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 0.400 Symbol Parameter Value Units 0.600 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V
8.12. Size:242K lge
2sc2230-2sc2230a.pdf
2SC2230/2SC2230A TO-92MOD Transistor (NPN) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 High voltage VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.800 0.900 1.100 0.400 0.600 13.800 14.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1.500 TYP 2.900 Dimensions in inches and (millimeters) VCBO
8.13. Size:223K lge
2sc2235 to-92mod.pdf
2SC2235 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 2. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.800 6.200 MAXIMUM RATINGS (TB B=25 unless otherwise noted) A 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VB B Collector-Base Voltage 120 V CBO 0.400 0.600 VB B Collector-Emitter Voltage 120 V CEO VB B Emitter-Base Voltage 5 V 13
8.14. Size:1033K blue-rocket-elect
2sc2235.pdf
2SC2235 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SA965 Complementary to 2SA965. / Applications , Audio frequency amplifier and driver stage amplifier Applications. / Equivale
8.15. Size:213K inchange semiconductor
2sc2239.pdf
isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION Collector-Emitter Breakdown Voltage V =160V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
8.16. Size:245K inchange semiconductor
2sc2233.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION Collector-Emitter Breakdown Voltage- VCEO= 60V(Min) DC Current Gain- hFE= 30(Min)@ (VCE= 5V, IC= 1A) High Collector Current High Collector Power Dissipation APPLICATIONS TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P
Otros transistores... 2SC2234, 2SC2235, 2SC2235O, 2SC2235Y, 2SC2236, 2SC2236O, 2SC2236Y, 2SC2237, 2SC4793, 2SC2238A, 2SC2238B, 2SC2239, 2SC224, 2SC2240, 2SC2240BL, 2SC2240GR, 2SC2241
