2SC237 Datasheet. Equivalente

 0.1. Size:110K  panasonic
 2sc2377.pdf

Transistors 2SC2377 Silicon NPN epitaxial planar type For high-frequency amplification Unit mm 2.5 0.1 6.9 0.1 (1.0) (1.5) Features (1.5) Optimum for RF amplification of FM/AM radios High transition frequency fT R 0.9 M type package allowing easy automatic and manual insertion R 0.7 as well as stand-alone fixing to the printed circuit board (0.85) Absolute

 0.2. Size:62K  panasonic
 2sc2377 e.pdf

Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Max

 0.3. Size:106K  mospec
 2sc2373.pdf

A A A

 0.4. Size:177K  jmnic
 2sc2373.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION With TO-220 package Low collector saturation voltage Fast switching time APPLICATIONS For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAME

 0.5. Size:145K  jmnic
 2sc2371.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION With TO-126 package High Voltage High frequency APPLICATIONS For TV chroma output and vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter

 0.6. Size:222K  inchange semiconductor
 2sc2373.pdf

isc Silicon NPN Power Transistor 2SC2373 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 5A, I = 0.5A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output for B/W

 0.7. Size:210K  inchange semiconductor
 2sc2371.pdf

isc Silicon NPN Power Transistor 2SC2371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for video applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V C