2SC2408 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2408
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3500 MHz
Capacitancia de salida (Cc): 1.2 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO92
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2SC2408 datasheet
2sc2408.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz High Gain S 2 = 21 dB TYP. ;@ f = 200 MHz 21e Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V
2sc2405 2sc2406.pdf
Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape
2sc2405 e.pdf
Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape
Otros transistores... 2SC2400, 2SC2401, 2SC2402, 2SC2403, 2SC2404, 2SC2405, 2SC2406, 2SC2407, 2SD669A, 2SC2409, 2SC241, 2SC2410, 2SC2411, 2SC2412, 2SC2413, 2SC2414, 2SC2415
History: GES4927
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