2SC2408 Specs and Replacement
Type Designator: 2SC2408
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3500 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92
2SC2408 Substitution
- BJT ⓘ Cross-Reference Search
2SC2408 datasheet
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz High Gain S 2 = 21 dB TYP. ;@ f = 200 MHz 21e Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape ... See More ⇒
Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape ... See More ⇒
Detailed specifications: 2SC2400, 2SC2401, 2SC2402, 2SC2403, 2SC2404, 2SC2405, 2SC2406, 2SC2407, 2SD669A, 2SC2409, 2SC241, 2SC2410, 2SC2411, 2SC2412, 2SC2413, 2SC2414, 2SC2415
Keywords - 2SC2408 pdf specs
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