2SC2525 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2525
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 120 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 180 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: MT-200
Búsqueda de reemplazo de 2SC2525
2SC2525 PDF detailed specifications
2sc2525.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2525 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
2sc2523.pdf
isc Silicon NPN Power Transistor 2SC2523 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SA1073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators D... See More ⇒
2sc2526.pdf
isc Silicon NPN Power Transistor 2SC2526 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1076 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
Otros transistores... 2SC2518Y , 2SC2519 , 2SC251A , 2SC252 , 2SC2522 , 2SC2522A , 2SC2523 , 2SC2524 , TIP31C , 2SC2526 , 2SC2527 , 2SC2528 , 2SC2529 , 2SC253 , 2SC2530 , 2SC2531 , 2SC2532 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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