2SC2535 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2535DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit: mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE: hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base

SMD Type TransistorsNPN Transistors2SC2532SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=40V+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2534DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed high voltage switching applicationSwitching regulator applicationsHigh speed DC-DC converter applicatio