2SC2555 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2555
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar 2SC2555
2SC2555 Datasheet (PDF)
2sc2555.pdf
isc Silicon NPN Power Transistor 2SC2555DESCRIPTIONHigh Collector-Emitter Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplicationsHigh speed DC-DC converter applicationsMinimum Lot-to-Lot variations for robust device
2sc2551.pdf
2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacita
2sc2551.pdf
2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage G H Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 JEmitterA DCollectorBase BCLASSIFICATION OF hFE(1) KMillimet
2sc2551.pdf
2SC2551(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Vo
2sc2552.pdf
isc Silicon NPN Power Transistor 2SC2552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc2553.pdf
isc Silicon NPN Power Transistor 2SC2553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc2556.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2556DESCRIPTIONHigh transistor frequencyLow Saturation VoltageHigh VCBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency output amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
2sc2556 2sc2556a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2556 2SC2556A DESCRIPTION With TO-126 package High VCBO Low collector saturation voltage High transition frequency APPLICATIONS Audio frequency output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
