2SC2555 Specs and Replacement
Type Designator: 2SC2555
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO218
- BJT ⓘ Cross-Reference Search
2SC2555 datasheet
..3. Size:196K inchange semiconductor
2sc2555.pdf 
isc Silicon NPN Power Transistor 2SC2555 DESCRIPTION High Collector-Emitter Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications Minimum Lot-to-Lot variations for robust device... See More ⇒
8.2. Size:330K toshiba
2sc2551.pdf
2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacita... See More ⇒
8.3. Size:766K secos
2sc2551.pdf
2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage G H Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 J Emitter A D Collector Base B CLASSIFICATION OF hFE(1) K Millimet... See More ⇒
8.4. Size:255K lge
2sc2551.pdf
2SC2551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vo... See More ⇒
8.5. Size:191K inchange semiconductor
2sc2552.pdf
isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.6. Size:191K inchange semiconductor
2sc2553.pdf
isc Silicon NPN Power Transistor 2SC2553 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
8.7. Size:195K inchange semiconductor
2sc2556.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2556 DESCRIPTION High transistor frequency Low Saturation Voltage High V CBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency output amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒
8.8. Size:121K inchange semiconductor
2sc2556 2sc2556a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2556 2SC2556A DESCRIPTION With TO-126 package High VCBO Low collector saturation voltage High transition frequency APPLICATIONS Audio frequency output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) ... See More ⇒
Detailed specifications: 2SC2549, 2SC255, 2SC2550, 2SC2551, 2SC2551O, 2SC2551R, 2SC2552, 2SC2553, 2SB817, 2SC2556, 2SC2556A, 2SC2557, 2SC2558, 2SC2559, 2SC256, 2SC2560, 2SC2561
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