2SC2565 Todos los transistores

 ..1. Size:71K  toshiba
 2sc2565.pdf

 ..2. Size:200K  jmnic
 2sc2565.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings

 ..3. Size:220K  inchange semiconductor
 2sc2565.pdf

isc Silicon NPN Power Transistor 2SC2565 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1095 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.1. Size:121K  1
 2sc2561.pdf

 8.2. Size:192K  jmnic
 2sc2564.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2564 DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings

 8.3. Size:201K  jmnic
 2sc2562.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION With TO-220 package Complement to type 2SA1012 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute

 8.4. Size:228K  inchange semiconductor
 2sc2564.pdf

isc Silicon NPN Power Transistor 2SC2564 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 8.5. Size:201K  inchange semiconductor
 2sc2563.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2563 DESCRIPTION High power dissipation Low Saturation Voltage High V CBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency output amplifier and general purpose application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 8.6. Size:221K  inchange semiconductor
 2sc2562.pdf

isc Silicon NPN Power Transistor 2SC2562 DESCRIPTION Low Collector Saturation Voltage V = 0.4(V)(Max)@I = 3A CE(sat) C High Switching Speed Complement to Type 2SA1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE